­
­
­
­

Inventi Impact: Electronic Components

Articles

  • Inventi:eec/32730/20
    Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
    Research 2020 : October - December
    Mircea Dragoman, Adrian Dinescu, Florin Nastase, Daniela Dragoman

    The ultimate memristor, which acts as resistive memory and an artificial neural synapse,\nis made from a single atomic layer. In this manuscript, we present experimental evidence of\nthe memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET).\nThe graphene FET has, as a channel, a graphene monolayer transferred onto anHfO2-based ferroelectric\nmaterial, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

    How to Cite this Article
    Attribution/ CC Compliant Citation:Dragoman, Mircea, et al. \"Memtransistors Based on Nanopatterned Graphene\nFerroelectric Field-Effect Transistors.\" Nanomaterials 10.7 (2020): 1404.\nhttps://doi.org/10.3390/nano10071404\nhttp://creativecommons.org/licenses/by/4.0/\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
    Download Full Text